A new GaN-based power module provides an effective solution for highly efficient power conversion in isolated DC/DC converters or DC/AC inverter stages. It offers a 2-in-1 solution, and can be utilized either as a 10 mOhm H-Bridge or 5 mOhm half-bridge.
The module features E-mode GaN HEMTs chip technology, promoting high efficiency and power density, and is available in an industry-standard package with low stray loop inductance. It is compatible with external gate drives, offering engineers high design flexibility.
